BFP750_15 Datasheet, PDF (7/29 Pages) Infineon Technologies AG – High Linearity Low Noise SiGe:C NPN RF Transistor

BFP750
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Product Brief
Product Brief
The BFP750 is a wideband linear low noise NPN bipolar RF transistor. The device is based on Infineon's reliable
high volume silicon germanium carbon (SiGe:C) heterojunction bipolar technology. The collector design supports
voltages up to VCEO = 4 V and currents up to IC = 120 mA. With its high linearity at currents as low as 20 mA
the device supports energy efficient designs. The typical transistor frequency is approximately 41 GHz, hence the
device offers high power gain at frequencies up to 7 GHz in amplifiers applications. The device is housed in an
easy to use plastic package with visible leads.
Data Sheet
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Revision 1.1, 2015-01-14