BFP420F_12 Datasheet, PDF (8/30 Pages) Infineon Technologies AG – Low Noise Silicon Bipolar RF Transistor

2
Features
• General purpose low noise NPN bipolar RF transistor
• Based on Infineon´s reliable very high volume 25 GHz
silicon bipolar technology
• 0.95 dB minimum noise figure typical at 900 MHz, 3 V, 4 mA
• 16.5 dB maximum gain (G_ma) typical at 2.4 GHz, 3 V, 15 mA
• 28 dBm OIP₃ typical at 2.4 GHz, 4 V, 40 mA
• 16.5 dBm OP_1dB typical at 2.4 GHz, 4 V, 40 mA
• Popular in discrete oscillators
• Thin, small, flat, Pb-free (RoHS compliant) and Halogen-free
package with visible leads
• Qualification report according to AEC-Q101 available
BFP420F
Features
Applications
As Low Noise Amplifier (LNA) in
• Satellite communication systems: Navigation systems (GPS, Glonass), satellite radio (SDARs, DAB)
• Multimedia applications such as mobile/portable TV, CATV, FM Radio
• ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer in RF Frontends
As active device in discrete oscillators
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name
BFP420F
Package
TSFP-4-1
1=B
Pin Configuration
2=E
3=C
4=E
Marking
AMs
Data Sheet
8
Revision 1.1, 2012-11-07