BFP420F_12 Datasheet, PDF (7/30 Pages) Infineon Technologies AG – Low Noise Silicon Bipolar RF Transistor

BFP420F
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Product Brief
Product Brief
The BFP420F is a low noise wideband NPN bipolar RF transistor. The collector design supports voltages up to
V_CEO = 4.5 V and currents up to I_C = 60 mA. The device is especially suited for mobile applications in which low
power consumption is a key requirement. The typical transition frequency is approximately 25 GHz, hence the
device offers high power gain at frequencies up to 4.5 GHz in amplifier applications. The device is housed in a thin
small flat plastic package with visible leads.
Data Sheet
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Revision 1.1, 2012-11-07