BFP420F_12 Datasheet, PDF (5/30 Pages) Infineon Technologies AG – Low Noise Silicon Bipolar RF Transistor

BFP420F
List of Figures
List of Figures
Figure 4-1 Total Power Dissipation P_tot = f (T_s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Figure 5-1 BFP420F Testing Circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
Figure 5-2 Collector Current vs. Collector Emitter Voltage IC = f (V_CE), I_B = Parameter in μA . . . . . . . . . . . . 18
Figure 5-3 DC Current Gain h_FE = f (I_C), V_CE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
Figure 5-4 Collector Current vs. Base Emitter Voltage I_C = f (V_BE), V_CE = 3 V. . . . . . . . . . . . . . . . . . . . . . . . . 19
Figure 5-5 Base Current vs. Base Emitter Forward Voltage I_B = f (V_BE), V_CE = 3 V . . . . . . . . . . . . . . . . . . . . 19
Figure 5-6 Base Current vs. Base Emitter Reverse Voltage I_B = f (V_EB), V_CE = 3 V . . . . . . . . . . . . . . . . . . . . 20
Figure 5-7 Collector Emitter Breakdown Voltage V_CER = f (R_BE), I_C = 1 mA. . . . . . . . . . . . . . . . . . . . . . . . . . . 20
Figure 5-8 Transition Frequency f_T = f (I_C), f = 2 GHz, V_CE = Parameter in V . . . . . . . . . . . . . . . . . . . . . . . . . 21
Figure 5-9 3rd Order Intercept Point OIP₃ = f (I_C), Z_S = Z_L= 50 Ω, V_CE, f = Parameters . . . . . . . . . . . . . . . . . 21
Figure 5-10 3rd Order Intercept Point at output OIP₃ [dBm]= f (I_C, V_CE), Z_S = Z_L= 50 Ω, f = 1900 MHz . . . . . . 22
Figure 5-11 Compression Point at output OP_1dB [dBm]= f (I_C, V_CE), Z_S = Z_L= 50 Ω, f = 1900 MHz . . . . . . . . . . 22
Figure 5-12 Collector Base Capacitance C_CB = f (V_CB), f = 1 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 5-13 Gain G_ma, G_ms, IS₂₁I² = f (f), V_CE = 3 V, I_C = 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
Figure 5-14 Maximum Power Gain G_max = f (I_C), V_CE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . . 24
Figure 5-15 Maximum Power Gain G_max = f (V_CE), I_C = 15 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . 24
Figure 5-16 Input Matching S₁₁ = f (f), V_CE = 3 V, I_C = 4 / 15 / 40 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
Figure 5-17 Source Impedance for Minimum Noise Figure Z_opt = f (f), V_CE = 3 V, I_C = 4 / 15 mA . . . . . . . . . . . 25
Figure 5-18 Output Matching S₂₂ = f (f), V_CE = 3 V, I_C = 4 / 15 / 40 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 5-19 Noise Figure NF_min = f (f), V_CE = 3 V, I_C = 4 / 16 mA, Z_S = Z_opt . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
Figure 5-20 Noise Figure NF_min = f (I_C), V_CE = 3 V, Z_S = Z_opt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . . 27
Figure 5-21 Noise Figure NF₅₀ = f (I_C), V_CE = 3 V, Z_S = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . 27
Figure 7-1 Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 7-2 Package Footprint. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 7-3 Marking Description (Marking BFP420F: AMs) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Figure 7-4 Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Data Sheet
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Revision 1.1, 2012-11-07