BFP420F_12 Datasheet, PDF (12/30 Pages) Infineon Technologies AG – Low Noise Silicon Bipolar RF Transistor

BFP420F
5.3
Frequency Dependent AC Characteristics
Electrical Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, T_A = 25 °C
Top View
E
C
VC
Bias -T
OUT
VB
Bias-T
IN
B
E
(Pin 1)
Figure 5-1 BFP420F Testing Circuit
Table 5-3 AC Characteristics, f = 150 MHz
Parameter
Symbol
Maximum Power Gain
@ low noise operating point
@ recommended trade off oper. point
@ max. linearity operating point
Transducer Gain
@ low noise operating point
@ recommended trade off oper. point
@ max. linearity operating point
Noise Figure
@ low noise operating point
Minimum noise figure
Associated gain
@ recommended trade off oper. point
Minimum noise figure
Associated gain
Linearity
@ recommended trade off oper. point
3rd order intercept point at output
1 dB gain compression point at output
@ max. linearity operating point
3rd order intercept point at output
1 dB gain compression point at output
G_ms
G_ms
G_ms
S₂₁
S₂₁
S₂₁
NF_min
G_ass
NF_min
G_ass
OIP₃
OP_1dB
OIP₃
OP_1dB
Min.
–
–
–
–
–
–
–
–
–
–
–
–
–
Values
Typ. Max.
30
–
34.5 –
37
–
22
–
30
–
33
–
0.9 –
24
–
1.4 –
29
–
21
–
7
–
25
–
15.5 –
Unit Note / Test Condition
dB
Z_S = Z_SoptG, Z_L = Z_LoptG
V_CE = 3 V, I_C = 4 mA
V_CE = 3 V, I_C = 15 mA
V_CE = 4 V, I_C = 40 mA
dB Z_S = Z_L = 50 Ω
V_CE = 3 V, I_C = 4 mA
V_CE = 3 V, I_C = 15 mA
V_CE = 4 V, I_C = 40 mA
dB
Z_S = Z_SoptN
V_CE = 3 V, I_C = 4 mA
V_CE = 3 V, I_C = 15 mA
dB Z_S = Z_L = 50 Ω
V_CE = 3 V, I_C = 15 mA
V_CE = 4 V, I_C = 40 mA
Data Sheet
12
Revision 1.1, 2012-11-07