BFP420F_12 Datasheet, PDF (23/30 Pages) Infineon Technologies AG – Low Noise Silicon Bipolar RF Transistor

BFP420F
Electrical Characteristics
0.3
0.24
0.18
0.12
0.06
0
0 0.5 1 1.5 2 2.5 3 3.5 4
V_CB [V]
Figure 5-12 Collector Base Capacitance C_CB = f (V_CB), f = 1 MHz
40
35
30
G_ms
25
20
G_ma
15
|S₂₁|²
10
5
0
0
1
2
3
4
5
6
f [GHz]
Figure 5-13 Gain G_ma, G_ms, IS₂₁I² = f (f), V_CE = 3 V, I_C = 15 mA
Data Sheet
23
Revision 1.1, 2012-11-07