SPP80P06P Datasheet, PDF (7/9 Pages) Infineon Technologies AG – SIPMOS Power-Transistor

Preliminary data
SPP80P06P
SPB80P06P
Drain-source on-state resistance
R_DS(on) = f (T_j)
parameter : I_D = -64 A, V_GS = -10 V
SPP80P06P
W^0.070
0.060
0.055
0.050
0.045
0.040
0.035
0.030
98%
typ
0.025
0.020
0.015
0.010
0.005
0.000
-60 -20
20
60 100 140 ^°C 200
T_j
Typ. capacitances
C = f (V_DS)
parameter: V_GS=0V, f=1 MHz
10 ⁵
Gate threshold voltage
V_GS(th) = f (T_j)
parameter: V_GS = V_DS, I_D = -5.5 mA
-5.0
V
98%
-4.0
-3.5
typ
-3.0
-2.5
2%
-2.0
-1.5
-1.0
-0.5
0.0
-60 -20 20 60 100 140 _°C 200
T_j
Forward characteristics of reverse diode
I_F = f (V_SD)
parameter: T_j , tp = 80 µs
10 ^{3 SPP80P06P}
pF
A
10 ⁴
10 ³
10 ²
0
10 ²
C_iss
C_oss
10 ¹
C_rss
T_j = 25 °C typ
T_j = 175 °C typ
T_j = 25 °C (98%)
T_j = 175 °C (98%)
-5
-10
-15
V
-25
V_DS
10 ⁰
0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0
V_SD
Page 7
1999-11-22