SPP80P06P Datasheet, PDF (4/9 Pages) Infineon Technologies AG – SIPMOS Power-Transistor

Preliminary data
SPP80P06P
SPB80P06P
Electrical Characteristics, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Dynamic Characteristics
Gate to source charge
V_DD = -48 V, I_D = -80 A
Gate to drain charge
V_DD = -48 V, I_D = -80 A
Gate charge total
V_DD = -48 V, I_D = -80 A, V_GS = 0 to -10 V
Gate plateau voltage
V_DD = -48 V , I_D = -80 A
Q_gs
- 27.4 41 nC
Q_gd
-
50 75
Q_g
- 115 173
V_(plateau) -
-6.2
-V
Parameter
Reverse Diode
Inverse diode continuous forward current
T_C = 25 °C
Inverse diode direct current,pulsed
T_C = 25 °C
Inverse diode forward voltage
V_GS = 0 V, I_F = -80 A
Reverse recovery time
V_R = -30 V, I_F=I_S , di_F/dt = 100 A/µs
Reverse recovery charge
V_R = -30 V, I_F=l_S , di_F/dt = 100 A/µs
Symbol
Values
Unit
min. typ. max.
I_S
-
-
-80 A
I_SM
-
- -320
V_SD
- -1.2 -1.6 V
t_rr
- 117 175 ns
Q_rr
- 420 630 nC
Page 4
1999-11-22