SPP80P06P Datasheet, PDF (3/9 Pages) Infineon Technologies AG – SIPMOS Power-Transistor

Preliminary data
SPP80P06P
SPB80P06P
Electrical Characteristics, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Dynamic Characteristics
Transconductance
³ V_DS 2*I_D*R_DS(on)max , I_D = -64 A
Input capacitance
V_GS = 0 V, V_DS = -25 V, f = 1 MHz
Output capacitance
V_GS = 0 V, V_DS = -25 V, f = 1 MHz
Reverse transfer capacitance
V_GS = 0 V, V_DS = -25 V, f = 1 MHz
Turn-on delay time
V_DD = -30 V, V_GS = -10 V, I_D = -64 A,
R_G = 1 W
Rise time
V_DD = -30 V, V_GS = -10 V, I_D = -64 A,
R_G = 1 W
Turn-off delay time
V_DD = -30 V, V_GS = -10 V, I_D = -64 A,
R_G = 1 W
Fall time
V_DD = -30 V, V_GS = -10 V, I_D = -64 A,
R_G = 1 W
g_fs
C_iss
C_oss
C_rss
t_d(on)
18 36
-S
- 4026 5033 pF
- 1252 1565
- 437 546
-
24 36 ns
t_r
-
18 27
t_d(off)
-
56 84
t_f
-
30 45
Page 3
1999-11-22