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SPP80P06P Datasheet, PDF (5/9 Pages) Infineon Technologies AG – SIPMOS Power-Transistor
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Power dissipation
Ptot = f (TC)
SPP80P06P
360
W
Preliminary data
Drain current
ID = f (TC)
³ parameter: VGS 10 V
SPP80P06P
-90
A
SPP80P06P
SPB80P06P
280
-70
240
-60
200
-50
160
-40
120
-30
80
-20
40
-10
0
0
20 40 60 80 100 120 140 160°C 190
TC
Safe operating area
ID = f ( VDS )
parameter : D = 0 , TC = 25 °C
-10 3 SPP80P06P
A
tp = 14.0µs
0
0
20 40 60 80 100 120 140 160°C 190
TC
Transient thermal impedance
ZthJC = f (tp)
parameter : D = tp/T
SPP80P06P
10 1
K/W
10 0
-10 2
-10 1
100 µs
1 ms
10 ms
DC
10 -1
10 -2
10 -3
10 -4
single pulse
D = 0.50
0.20
0.10
0.05
0.02
0.01
-10
0
-10
-1
-10 0
-10 1
V -10 2
VDS
Page 5
10
-5
10
-7
10 -6
10 -5
10 -4
10 -3
10 -2
s 10 0
tp
1999-11-22
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