SPP80P06P Datasheet, PDF (2/9 Pages) Infineon Technologies AG – SIPMOS Power-Transistor

Preliminary data
SPP80P06P
SPB80P06P
Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm² cooling area ¹⁾
Symbol
Values
Unit
min. typ. max.
R_thJC
R_thJA
R_thJA
-
-
0.4 K/W
-
-
62
-
-
62
-
-
40
Electrical Characteristics, at T_j = 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V_GS = 0 V, I_D = -250 µA
Gate threshold voltage, V_GS = V_DS
I_D = -5.5 mA
Zero gate voltage drain current
V_DS = -60 V, V_GS = 0 V, T_j = 25 °C
V_DS = -60 V, V_GS = 0 V, T_j = 150 °C
Gate-source leakage current
V_GS = -20 V, V_DS = 0 V
Drain-source on-state resistance
V_GS = -10 V, I_D = -64 A
V_(BR)DSS -60
-
-V
V_GS(th) -2.1
-3
-4
I_DSS
I_GSS
R_DS(on)
µA
- -0.1 -1
-
-10 -100
-
-10 -100 nA
- 0.021 0.023 W
1Device _{on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain}
connection. PCB is vertical without blown air.
Page 2
1999-11-22