SPP80P06P Datasheet, PDF (6/9 Pages) Infineon Technologies AG – SIPMOS Power-Transistor

Preliminary data
SPP80P06P
SPB80P06P
Typ. output characteristic
I_D = f (V_DS); T_j=25°C
parameter: t_p = 80 µs
SPP80P06P
-190 _{Ptot = 340.00W}
A
kj
-160
-140
-120
-100
-80
-60
V_GS [V]
a
-4.0
b
-4.5
i^c
-5.0
d
-5.5
e
-6.0
h
f
-6.5
g
-7.0
g_h
-7.5
i
-8.0
fj
-9.0
k
-10.0
e
-40
d
-20
c
b
a
0
0
-1
-2
-3
-4
-5
-6
-7
-8 V
-10
V_DS
Typ. transfer characteristics I_D= f ( V_GS )
³ V_DS 2 x I_D x R_DS(on)max
parameter: t_p = 80 µs
-80
A
-60
-50
Typ. drain-source-on-resistance
R_DS(on) = f (I_D)
parameter: V_GS
SPP80P06P
W^0.075
bcd e
f
g
h
i
0.060
0.055
0.050
0.045
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
V_GS [V] =
bc
-4.5 -5.0
def
-5.5 -6.0 -6.5
ghi j
-7.0 -7.5 -8.0 -9.0
k
-10.0 _{j k}
0.000
0
-20 -40 -60 -80 -100 -120 A
-160
I_D
Typ. forward transconductance
g_fs = f(I_D); T_j=25°C
parameter: g_fs
50
S
40
35
30
-40
25
20
-30
15
-20
10
-10
5
00 _{-1 -2 -3 -4 -5 -6 -7 -8 V -10}
V_GS
Page 6
00 _{-10 -20 -30 -40 -50 -60 -70 -80 A -100}
I_D
1999-11-22