SPP18P06P_09 Datasheet, PDF (7/9 Pages) Infineon Technologies AG – SIPMOS® Power-Transistor Features P-Channel Enhancement mode

13 Avalanche characteristics
I _AS=f(t _AV); R _GS=25 Ω
parameter: T _j(start)
10²
14 Typ. gate charge
V _GS=f(Q _gate); I _D=-18.6 A pulsed
parameter: V _DD
16
SPP18P06P G
14
12
25 °C
10
12 V
30 V
48 V
10¹
100 °C
8
125 °C
6
4
2
10⁰
10⁰
10^{1 t AV [µs]} 10²
15 Drain-source breakdown voltage
V _BR(DSS)=f(T _j); I _D=-250 µA
0
0
5
10
15
20
25
30
10³
Q _gate [nC]
16 Gate charge waveforms
70
V _GS
Q_g
65
60
V _{g s(th)}
Rev1.8
55
Q _g(th)
50
-60
-20
20
60 100 140 180
T _j [°C]
Q _gs
page 7
Q _sw
Q _gd
Q _gate
2009-04-14