SPP18P06P_09 Datasheet, PDF (6/9 Pages) Infineon Technologies AG – SIPMOS® Power-Transistor Features P-Channel Enhancement mode

9 Drain-source on-state resistance
R _DS(on)=f(T _j); I _D=-13.2 A; V _GS=-10 V
10 Typ. gate threshold voltage
V _GS(th)=f(T _j); V _GS=V _DS; I _D=-1000 µA
SPP18P06P G
350
300
250
200
98 %
150
100
typ.
4
3.5
3
max.
2.5
typ.
2
min.
1.5
1
50
0.5
0
-60
-20
20
60
100 140 180
T _j [°C]
0
-60 -20
20
60 100 140 180
T _j [°C]
11 Typ. capacitances
C =f(V _DS); V _GS=0 V; f =1 MHz
12 Forward characteristics of reverse diode
I _F=f(V _SD)
parameter: T _j
25 °C, typ
10³
10¹ 150 °C, typ
Ciss
Coss
10²
10¹
0
Rev1.8
Crss
10⁰
150 °C, 98%
25 °C, 98%
5
10
15
20
25
-V _DS [V]
10^-1
0
0.5
1
1.5
2
2.5
3
-V _SD [V]
page 6
2009-04-14