SPP18P06P_09 Datasheet, PDF (1/9 Pages) Infineon Technologies AG – SIPMOS® Power-Transistor Features P-Channel Enhancement mode

SIPMOS^® Power-Transistor
Features
• P-Channel
• Enhancement mode
• Avalanche rated
• dv /dt rated
• 175°C operating temperature
· Pb-free lead finishing; RoHS compliant
Product Summary
V _DS
R _DS(on),max
I_D
SPP18P06P G
-60 V
0.13 Ω
-18.6 A
PG-TO220-3
Type
Package
SPP18P06PG PG-TO220-3
Tape and reel information
50pcs / tube
Maximum ratings, at T _j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
Pulsed drain current
I_D
I _D,pulse
T _A=25 °C
T _A=100 °C
T _A=25 °C
Marking Lead free
18P06P Yes
Value
steady state
-18.7
-13.2
-74.8
Avalanche energy, single pulse
E _AS
I _D=18.7 A, R _GS=25 Ω
151
Avalanche energy, periodic limited by
T_jmax
E _AR
Reverse diode dv /dt
dv /dt
I _D=18.7 A, V _DS=48 V,
di /dt =-200 A/µs,
T _j,max=175 °C
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
Soldering temperature
V _GS
P _tot
T _A=25 °C¹⁾
T _j, T _stg
IEC climatic category; DIN IEC 68-1
8
-6
±20
81.1
"-55 ... +175"
260 °C
55/150/56
Unit
A
mJ
kV/µs
V
W
°C
Rev1.8
page 1
2009-04-14