SPP18P06P_09 Datasheet, PDF (3/9 Pages) Infineon Technologies AG – SIPMOS® Power-Transistor Features P-Channel Enhancement mode

Parameter
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Symbol Conditions
SPP18P06P G
min.
Values
typ.
Unit
max.
C _iss
-
C _oss
V _GS=0 V, V _DS=-25 V,
f =1 MHz
-
C _rss
-
t _d(on)
-
t_r
V _DD=-30 V, V _GS=-
-
10 V, I _D=-13.2 A,
t _d(off)
R _G=2.7 Ω
-
t_f
-
690
860 pF
230
290
95
120
12.0 18.0 ns
5.8
8.7
25
37
11
16.5
Q _gs
-
Q _gd
V _DD=-48 V, I _D=-
-
Q_g
18.6 A, V _GS=0 to -10 V _-
V _plateau
-
-4.1
-11
-21
-5.94
-5.5 nC
-17
-28
-V
I_S
I _S,pulse
T _A=25 °C
-
-
18.60 A
-
-
-74.8
V _SD
V _GS=0 V, I _F=-18.6 A,
T _j=25 °C
-
-0.99 -1.33 V
t _rr
V _R=30 V, I _F=|I _S|,
Q _rr
di _F/dt =100 A/µs
-
70
105 ns
-
139
208 nC
Rev1.8
page 3
2009-04-14