SPP18P06P_09 Datasheet, PDF (5/9 Pages) Infineon Technologies AG – SIPMOS® Power-Transistor Features P-Channel Enhancement mode

5 Typ. output characteristics
I _D=f(V _DS); T _j=25 °C
parameter: V _GS
40
35
-20 V
-10 V
30
-7 V
25
20
-6 V
15
-5.5 V
10
-5 V
5
-4.5 V
-4 V
0
0
2
4
6
-V _DS [V]
7 Typ. transfer characteristics
I _D=f(V _GS); |V _DS|>2|I _D|R _DS(on)max
parameter: T _j
8
SPP18P06P G
6 Typ. drain-source on resistance
R _DS(on)=f(I _D); T _j=25 °C
parameter: V _GS
400
320
-4 V
-4.5 V
-5 V
-5.5 V
-6 V
240
-7 V
160
-10 V
80
-20 V
0
8
0
5 10 15 20 25 30 35
-I _D [A]
8 Typ. forward transconductance
g _fs=f(I _D); T _j=25 °C
14
12
6
10
8
4
6
2
4
125 °C
25 °C
2
0
0
1
2
3
4
5
-V _GS [V]
0
0
5
10
15
20
25
30
-I _D [A]
Rev1.8
page 5
2009-04-14