SPP18P06P_09 Datasheet, PDF (2/9 Pages) Infineon Technologies AG – SIPMOS® Power-Transistor Features P-Channel Enhancement mode

Parameter
Thermal characteristics
Thermal resistance,
junction - case
Thermal resistance,
junction - ambient, leaded
SMD version, device on PCB:
Symbol Conditions
SPP18P06P G
min.
Values
typ.
Unit
max.
R _thJC
-
R _thJA
-
R _thJA minimal footprint
-
6 cm² cooling area¹⁾
-
-
1.85 K/W
-
62
-
62 K/W
-
40
Electrical characteristics, at T _j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
V _(BR)DSS V _GS=0 V, I _D=-250 µA
V _GS(th)
V _DS=V _GS, I _D=-
1000 µA
-60
-2.1
I _DSS
V _DS=-60 V, V _GS=0 V,
T _j=25 °C
-
V _DS=-60 V, V _GS=0 V,
T _j=150 °C
-
I _GSS
V _GS=-20 V, V _DS=0 V
-
-
-V
2.7
-4
-0.1
-1 µA
-10
-100
-10
-100 nA
Drain-source on-state resistance
R _DS(on) V _GS=-10 V, I _D=-13.2 A
-
102
130 mΩ
Transconductance
g _fs
|V _DS|>2|I _D|R _DS(on)max,
I _D=-13.2 A
5
10
-S
1) _{Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6 cm}2 _{(one layer, 70 µm thick) copper area for drain connection.}
PCB is vertical without blown air.
Rev1.8
page 2
2009-04-14