PXAC260622SC_15 Datasheet, PDF (7/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PXAC260622SC
Package Outline Specifications
2X D 45° x .64
[.025]
Package H-37248H-4 with Formed Leads
(8.89
[.350])
(5.08
[.200])
D1
D2
CL
9.78
[.385]
CL
1.49±0.25
[.059±.010]
1.00+-00.1.205
[^{.039+-.0.00140} ]
14.75±0.50
[.581±.020]
4X R0.51+-00.1.338
[ ^{R.020+-.0.00155} ]
3.76±0.25
[.148±.010]
G1
G2
CL
4X 3.81
[.150]
2X 12.70
[.500]
19.81±0.20
[.780±.008]
H-37248H-4_GW_po_02_12-03-2012
20.57
[.810]
4X 5°±3°
(1.02
[.040])
4X 0.13±0.08
[.005±.003] SPH
S

Diagram Notes—unless otherwise specified:
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. All tolerances ± 0.127 [.005] unless specified otherwise.
4. Pins: D1, D2 – drains; G1, G2 – gates; S – source.
5. Lead thickness: 0.10 + 0.051/-0.025 mm [.004 +0.002/-0.001 inch].
6. Gold plating thickness: 1.14 ± 0.38 micron [45 ± 15 microinch].
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/rfpower
Data Sheet
7 of 8
Rev. 02.1, 2015-06-03