PXAC260622SC_15 Datasheet, PDF (4/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PXAC260622SC
Typical Performance (cont.)
Small Signal CW
Gain & Input Return Loss
V_DD = 28 V, I_DQ = 115 mA
20
-2
18
-6
Gain
16
-10
14
IRL
-14
12
-18
10
-22
8
2300
2400
pxfc260622sc_g6
-26
2500 2600 2700 2800 2900
Frequency (MHz)
Load Pull Performance
Main Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 28 V, I_DQ = 115 mA
P_1dB
Max Output Power
Max Drain Efficiency
Freq
Zs
[MHz]
[W]
Zl
Gain
P_OUT
P_OUT
h_D
[W]
[dB] [dBm]
[W]
[%]
Zl
Gain
P_OUT
P_OUT
h_D
[W]
[dB] [dBm]
[W]
[%]
2496 16.4 – j12.3 9.8 – j12.0 19.8
44.3
27.1
55.1 10.9 – j5.9 21.6
43.2
20.8
61.3
2570 18.0 – j11.1 8.9 – j11.8 19.4
44.3
26.7
54.1
9.5 – j6.0 21.4
43.0
20.0
60.4
2690 18.3 – j 0.1 10.1 – j13.5 19.2
44.4
27.8
56.0
8.0 – j8.4 20.9
43.3
21.4
61.5
Peak Side Load Pull Performance – Pulsed CW signal: 10 µs, 10% duty cycle, 28 V, V_GSPEAK = 1.4 V , I_DQ = 115 mA
P_1dB
Max Output Power
Max Drain Efficiency
Freq
Zs
[MHz]
[W]
Zl
Gain
P_OUT
P_OUT
h_D
[W]
[dB] [dBm]
[W]
[%]
Zl
Gain
P_OUT
P_OUT
h_D
[W]
[dB]
[dBm]
[W]
[%]
2495 17.6 – j14.7 5.3 – j11.1 14.7
47.7
59
59.4
7.8 – j7.1
15.6
46.2
42
67.6
2570 19.7 – j11.1 6.2 – j13.2 15.5
47.4
55
56.8
7.0 – j7.4
15.6
45.7
37
65.5
2690 19.0 – j0.5 6.1 – j15.1 14.1
47.4
55
57.8 6.2 – j10.5 15.1
45.9
38
64.8
Data Sheet
4 of 8
Rev. 02.1, 2015-06-03