PXAC260622SC_15 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PXAC260622SC
Thermally-Enhanced High Power RF LDMOS FET
75 W, 28 V, 2496 – 2690 MHz
Description
The PXAC260622SC is a 75-watt LDMOS FET with an asymetric
design for use in multi-standard cellular power amplifier applications
in the 2496 to 2690 MHz frequency band. It features dual-path design,
input and output matching, and a thermally-enhanced, surface-mount
package with earless flange. Manufactured with Infineon's advanced
LDMOS process, this device provides excellent thermal performance
and superior reliability.
PXAC260622SC
Package H-37248H-4
with formed leads
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 115 mA, ƒ = 2690 MHz,
3GPP WCDMA signal, PAR = 10 dB,
3.84 MHz BW
24
75
Efficiency
20
50
16
25
Gain
12
0
8
PAR @ 0.01% CCDF
-25
4
-50
Features
• Broadband internal input and output matching
• Asymmetrical Doherty design
- Main: 25 W Typ (P_1dB)
- Peak: 50 W Typ (P_1dB)
• Typical pulsed performance in a Doherty configura-
tion, at 39.5 dB P_OUT, 2690 MHz, 28 V, with pulse
10 µs, 10% DC
- Gain = 16dB
- Efficiency = 45%
• Integrated ESD protection
• Pb-free and RoHS compliant
• Capable of handling 10:1 VSWR @28 V, 50 W
(CW) output power
0
27
-75 _{pxfc260622sc_g1}
31
35
39
43
47
Average Output Power (dBm)
RF Characteristics
Single-carrier WCDMA Specifications (device tested in Infineon Doherty test fixture with straight leads)
V_DD = 28 V, I_DQ = 115 mA, P_OUT = 8.9 W avg, ƒ₁ = 2690 MHz, 3GPP signal, channel bandwidth = 3.84 MHz, peak/average =
10 dB @ 0.01% CCDF
Characteristic
Symbol Min Typ
Max
Unit
Gain
Drain Efficiency
Adjancent Channel Power Ratio
G_ps
14.5 15.8
—
dB
h_D
40
42
—
%
ACPR
—
–30
–27
dBc
All published data at T_CASE = 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 02.1, 2015-06-03