PXAC260622SC_15 Datasheet, PDF (6/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PXAC260622SC
Reference Circuit (cont.)
Reference Circuit Assembly
DUT
PXAC260622SC V1
Test Fixture Part No. LTA/PXAC260062SC V1
PCB
Rogers 4350, 0.508 mm [0.020”] thick, 2 oz. copper, ε_r = 3.66, ƒ = 2496 – 2690 MHz
Find Gerber files for this test fixture on the Infineon Web site at http://www.infineon.com/rfpower
Components Information
Component
Description
Input
C101, C102, C103, C104 Capacitor, 8.2 pF
C105, C106, C107,
C108, C109, C110
Capacitor, 4.7 µF
C111
Capacitor, 0.5 pF
R101, R102
Resistor, 10 Ω
R103
Resistor, 50 Ω
U1
Hybrid Coupler
Output
C201, C202, C203, C204 Capacitor, 8.2 pF
C205, C206, C207,
C208, C209, C210,
C211, C212, C213,
C214, C215, C216,
C217, C218, C219
Capacitor, 4.7 µF
C220
Capacitor, 1.5 pF
C221
Capacitor, 1.0 pF
C222
Capacitor, 0.6 pF
Manufacturer
ATC
Murata Electronics North America
ATC
Panasonic Electronic Components
Richardson
Anaren
ATC
Murata Electronics North America
P/N
ATC800A8R2JW150XB
GRM32ER71H475KA88L
ATC800A0R5CW150XB
ERJ-3GEYJ100V
C16A50Z4
X3C25P1-04S
ATC800A8R2JW150XB
GRM32ER71H475KA88L
ATC
ATC800A1R5CW150XB
ATC
ATC800A1R0CW150XB
ATC
ATC800A0R6CW150XB
Pinout Diagram (top view)
Peak
S
Main
D1
D2
G1
G2
Lead connections for PXAC260622SC
Pin Description
D1 Drain device 1 (Peak)
D2 Drain device 2 (Main)
G1 Gate device 1 (Peak)
G2 Gate device 2 (Main)
S Source (flange)
Data Sheet
6 of 8
Rev. 02.1, 2015-06-03