PXAC260622SC_15 Datasheet, PDF (2/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PXAC260622SC
DC Characteristics
Characteristic
Conditions
Symbol
Min
Typ
Max Unit
Drain-source Breakdown Voltage
V_GS = 0 V, I_DS = 10 mA
V_(BR)DSS
65
—
—
V
Drain Leakage Current
V_DS = 28 V, V_GS = 0 V
I_DSS
—
—
1
µA
V_DS = 63 V, V_GS = 0 V
I_DSS
—
—
10
µA
Gate Leakage Current
On-state Resistance
(main)
V_GS = 10 V, V_DS = 0 V
V_GS = 10 V, V_DS = 0.1 V
I_GSS
R_DS(on)
—
—
1.0
—
0.50
—
µA
W
(peak)
V_GS = 10 V, V_DS = 0.1 V
R_DS(on)
—
0.25
—
W
Operating Gate Voltage (main)
V_DS = 28 V, I_DQ = 115 mA
V_GS
2.0
2.6
3.0
V
(peak)
V_DS = 28 V, I_DQ = 0 A
V_GS
—
1.4
—
V
Maximum Ratings
Parameter
Drain-source Voltage
Gate-source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Thermal Resistance (main, T_CASE = 70°C, 55 W CW)
Thermal Resistance (peak, T_CASE = 70°C, 55 W CW)
Symbol
Value
V_DSS
65
V_GS
–6 to +10
V_DD
0 to +32
T_J
225
T_STG –65 to +150
R_qJC
0.962
R_qJC
0.499
Unit
V
V
V
°C
°C
°C/W
°C/W
Ordering Information
Type and Version
PXAC260622SC V1 R250
Order Code
PXAC260622SCV1R250XTMA1
Package Description
H-37248H-4, earless flange
Shipping
Tape & Reel, 250 pcs
Data Sheet
2 of 8
Rev. 02.1, 2015-06-03