PXAC260622SC_15 Datasheet, PDF (3/8 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET

PXAC260622SC
Typical Performance (data taken in a production test fixture)
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 115 mA, ƒ = 2690 MHz,
3GPP WCDMA signal, PAR = 10 dB,
BW = 3.84 MHz
-10
70
-20
60
-30
50
-40
40
-50
-60
-70
27
30
ACPU
ACPL
20
Efficiency
pxfc260622sc_g2
10
31
35
39
43
47
Average Output Power (dBm)
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 115 mA
3GPP WCDMA signal, PAR = 10 dB,
BW 3.84 MHz
-20
-25
-30
-35
-40
28
2495MHz ACPL
2495MHz ACPU
2570MHz ACPL
2570MHz ACPU
2690MHz ACPL
2690MHz ACPU
pxfc260622sc_g3
32
36
40
44
48
Output Power (dBm)
CW Performance
V_DD = 28 V, I_DQ = 115mA
2495MHz Gain
2570MHz Gain
2690MHz Gain
22
2495MHz Eff
2570MHz Eff
70
2690MHz Eff
Efficiency
20
60
18
50
16
40
14
30
Gain
12
20
10
29
pxfc260622sc_g4
10
33 37 41 45 49 53
Output Power (dBm)
22
20
18
16
14
12
10
27
CW Performance
at various V_DD
I_DQ = 115 mA, ƒ = 2690 MHz
24V Gain
28V Gain
32V Gain
24V Eff
28V Eff
70
Efficiency
32V Eff
60
50
40
30
Gain ₂₀
pxfc260622sc_g5
10
31 35 39 43 47 51
Output Power (dBm)
Data Sheet
3 of 8
Rev. 02.1, 2015-06-03