PTFA182001E Datasheet, PDF (7/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 - 1880 MHz

PTFA182001E
Confidential, Limited Internal Distribution
Reference Circuit (cont.)
C1
0.001µF
R2
1.3K V
R1
1.2K V
QQ1
LM7805
Q1
VDD
BCP56
C2
0.001µF
C3
0.001µF
R3
510 V
R8
2K V
R5
510 V
J1
l1
C7
0.6pF
l2
l3
C8
10pF
L1
C4
C5
C6
4.7µF 0.1µF 10pF
16V
l9
C13 C14 C15
10pF 1µF 1µF
C16
2.2µF
VDD
C17
C18
0.1µF
100µF
50V
l11
R6
10 V
DUT
C25
1.4pF
C27
10pF
l4
l5
l6
l7
l8
l13 l14
l15 l16
l17
l18
J2
C9
1.5pF
R7
10 V
l10
C26
l12
1.4pF
C28
0.2pF
L2
C10
4.7µF
16V
C11
0.1µF
C12
10pF
C19 C20 C21 C22
10pF 1µF 1µF 2.2µF
C23
0.1µF
C24
100µF
50V
Reference circuit schematic for ƒ = 1840 MHz
Circuit Assembly Information
DUT
PCB
PTFA182001E
0.76 mm [.030"] thick, ε_r = 3.48
LDMOS Transistor
Rogers RO4350
1 oz. copper
Microstrip
l1
l2
l3
l4
l5
l6 (taper)
l7
l8
l9, l10
l11, l12
l13
l14 (taper)
l15 (taper)
l16
l17
l18
Electrical Characteristics at 1840 MHz
0.056 λ, 50.2 Ω
0.024 λ, 50.2 Ω
0.051 λ, 50.2 Ω
0.050 λ, 50.2 Ω
0.019 λ, 42.8 Ω
0.054 λ, 42.8 Ω./ 6.9 Ω
0.040 λ, 6.9 Ω
0.021 λ, 6.9 Ω
0.186 λ, 59.1 Ω
0.328 λ, 50.7 Ω
0.062 λ, 5.0 Ω
0.043 λ, 5.0 Ω./ 15.1 Ω
0.021 λ, 15.1 Ω./ 41.2 Ω
0.026 λ, 41.2 Ω
0.095 λ, 50.2 Ω
0.072 λ, 50.2 Ω
Dimensions: L x W (mm)
5.54 x 1.68
2.39 x 1.68
5.00 x 1.68
4.93 x 1.68
1.88 x 2.16
5.23 x 2.16 / 20.32
3.63 x 20.32
1.85 x 20.32
18.59 x 1.27
32.39 x 1.65
5.51 x 28.83
3.84 x 28.83 / 8.43
1.96 x 8.43 / 2.29
2.49 x 2.29
9.42 x 1.68
7.11 x 1.68
Dimensions: L x W (in.)
0.218 x 0.066
0.094 x 0.066
0.197 x 0.066
0.194 x 0.066
0.074 x 0.085
0.206 x 0.085 / 0.800
0.143 x 0.800
0.073 x 0.800
0.732 x 0.050
1.275 x 0.065
0.217 x 1.135
0.151 x 1.135 / 0.332
0.077 x 0.332 / 0.090
0.098 x 0.090
0.371 x 0.066
0.280 x 0.066
Data Sheet
7 of 10
Rev. 01, 2008-03-12