PTFA182001E Datasheet, PDF (3/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 - 1880 MHz

PTFA182001E
Confidential, Limited Internal Distribution
Typical Performance (data taken in a production test fixture)
Broadband Performance
V_DD = 30 V, I_DQ = 1600 mA, P_OUT = 50 W
40
35
Return Loss
30
25
Efficiency
20
15
10
1760
Gain
1800
1840
1880
Frequency (MHz)
-5
-10
-15
-20
-25
-30
-35
1920
Power Sweep, CW Conditions
V_DD = 30 V, I_DQ = 1600 mA, ƒ = 1880 MHz
18
50
T_CASE = 25°C
17
T_CASE = 90°C
40
16 _Gain
30
15
20
Efficiency
14
10
13
0
30 32 34 36 38 40 42 44 46 48 50 52 54
Output Power (dBm)
Intermodulation Distortion Products
vs. Tone Spacing
V_DD = 30 V I_DQ = 1600 mA , ƒ = 1840 MHz,
P_OUT = 53 dBm PEP
0
-10
-20
3rd Order
-30
5th
-40
-50
7th
-60
0
5 10 15 20 25 30 35 40
Tone Spacing (MHz)
Edge EVM and Modulation Spectrum
vs. Quiescent Current
V_DD = 30 V, ƒ = 1836.6 MHz, P_OUT = 50 dBm
3.6
3.4
3.2
3.0 EVM
2.8
2.6
2.4
2.2
2.0
1.4 1.5
-10
-20
-30
-40
-50
400 kHz
-60
-70
600 kHz ^-80
-90
1.6 1.7 1.8 1.9 2.0
Quiescent Current (A)
Data Sheet
3 of 10
Rev. 01, 2008-03-12