PTFA182001E Datasheet, PDF (5/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 - 1880 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Power Sweep (CW) over Temperature
V_DD = 30 V, I_DQ = 1600 mA, ƒ = 1880 MHz
18
17
16
15
14
13
12
1
-15°C
25°C
85°C
10
100
Output Power (W)
1000
PTFA182001E
Voltage Sweep
I_DQ = 1600 mA, ƒ = 1840 MHz, tone spacing = 1 MHz,
Output Power (PEP) = 53 dBm
-10
50
-20
IM3 Up
-30
Efficiency 40
30
-40
-50
23
20
Gain
10
25
27
29
31
33
Supply Voltage (V)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
0.95
-20
0.44 A
1.32 A
2.20 A
3.30 A
6.61 A
9.91 A
0
20 40 60 80 100
Case Temperature (°C)
Data Sheet
5 of 10
Rev. 01, 2008-03-12