PTFA182001E Datasheet, PDF (4/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 - 1880 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
EDGE EVM Performance
V_DD = 30 V, I_DQ = 1600 mA, ƒ = 1836.6 MHz
5
50
4
Efficiency
40
3
30
2
20
1
10
EVM
0
0
34 36 38 40 42 44 46 48 50 52
Output Power, avg. (dBm)
PTFA182001E
EDGE Modulation Spectrum Performance
V_DD = 30 V, I_DQ = 1600 mA, ƒ = 1836.6 MHz
-40
-50
-60 ^{400 kHz}
-70 ^{600 kHz}
50
Efficiency
40
30
20
-80
10
-90
0
34 36 38 40 42 44 46 48 50 52
Output Power, avg. (dBm)
EDGE Modulation Spectrum Performance
V_DD = 30 V, I_DQ = 1600 mA, ƒ = 1879.8 MHz
-40
-50
-60 ^{400 kHz}
-70 ^{600 kHz}
50
Efficiency
40
30
20
-80
10
-90
0
34 36 38 40 42 44 46 48 50 52
Output Power (dBm)
Output Peak-to-Average Ratio Compression
(PARC) at various Power levels
V_DD = 30 V, I_DQ = 1600 mA, ƒ = 1880 MHz,
single-carrier WCDMA input PAR = 7.5 dB
100
Input
10
46.0 dBm
48.0 dBm
1
50.0 dBm
50.5 dBm
0.1
52.0 dBm
0.01
0.001
1 234 5678
Peak-to-Average (dB)
Data Sheet
4 of 10
Rev. 01, 2008-03-12