PTFA182001E Datasheet, PDF (1/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 - 1880 MHz

PTFA182001E
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FET
200 W, 1805 – 1880 MHz
Description
The PTFA182001E is a 200-watt LDMOS FET intended for EDGE
applications from 1805 to 1880 MHz. Features include input and output
matching, and thermally-enhanced single-ended package with a
slotted flange. Manufactured with Infineon's advanced LDMOS
process, this device provides excellent thermal performance and
superior reliability.
PTFA182001E
Package H-30260-2
2-Tone Drive-up
V_DD = 30 V, I_DQ = 1600 m A,
ƒ = 1840 MHz, tone spacing = 1 MHz
-25
45
-30
Efficiency
40
-35
35
-40
IM3
30
-45
IM5 ²⁵
-50
20
-55
15
IM7
-60
10
-65
5
37 39 41 43 45 47 49 51 53 55
Output Power, PEP (dBm)
Features
• Pb-free, RoHS-compliant and thermally-enhanced
package
• Broadband internal matching
• Typical EDGE performance at 1836.6 MHz, 30 V
- Average output power = 50 dBm
- Linear gain = 16.3 dB
- Efficiency = 37%
- EVM = 3.1%
- 400 kHz modulation = –61 dBc
- 600 kHz modulation = –76 dBc
• Typical CW performance, 1880 MHz, 30 V
- Output power at P–1dB = 220 W
- Efficiency = 49%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 5:1 VSWR @ 30 V, 200 W
(CW) output power
RF Characteristics
Two-tone Measurements (tested in Infineon test fixture)
V_DD = 30 V, I_DQ = 1.6 A, P_OUT = 200 W PEP, ƒ = 1840 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol
G_ps
η_D
IMD
Min Typ
15.7 16.6
37
38
—
–31.5
Max
—
—
–30
Unit
dB
%
dBc
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 10
Rev. 01, 2008-03-12