|
PTFA182001E Datasheet, PDF (2/10 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FET 200 W, 1805 - 1880 MHz | |||
|
◁ |
PTFA182001E
Confidential, Limited Internal Distribution
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 mA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 30 V, IDQ = 1.8 A
VGS = 10 V, VDS = 0 V
Symbol Min Typ
V(BR)DSS
65
â
IDSS
â
â
IDSS
â
â
RDS(on)
â
0.05
VGS
2.0
2.5
IGSS
â
â
Max
â
1.0
10.0
â
3.0
1.0
Unit
V
µA
µA
â¦
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (TCASE = 70°C, 200 W CW)
Symbol
VDSS
VGS
TJ
PD
TSTG
RθJC
Value
65
â0.5 to +12
200
625
3.57
â40 to +150
0.28
Unit
V
V
°C
W
W/°C
°C
°C/W
Ordering Information
Type and Version
PTFA182001E V1
Package Type
H-30260-2
Package Description
Thermally-enhanced slotted flange, single-ended
Marking
PTFA182001E
*See Infineon distributor for future availability.
Data Sheet
2 of 10
Rev. 01, 2008-03-12
|
▷ |