PTFA080551E Datasheet, PDF (7/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 – 960 MHz

Confidential, Limited Internal Distribution
Reference Circuit
PTFA080551E
PTFA080551F
C0.1001µF
R2
1.3K V
1R.12K V
QQ1
Q1
LM7805
BCP56
VDD
C0.2001µF
R2K3 _V
C0.3001µF
R4
2K V
R5
5.1 V
C4
10µF
35V
R6
10 V
C5
R7
0.1µF 5.1K
C6
0.1µF
C7
0.01µF
C8
33p F
l5
L1
C12
C13 C14
33pF 1µF 10µF
50V
VDD
C15
0.1µF
C16
10µF
50V
R F_IN
C9
33p F
R8
l6
10 V
DUT
C23
33p F
l1
l2
l3
l4
l8
l9
l10
l11
C10
C11
3.3pF 1.0pF
l7
C22
0. 3p F
L2
R F_OUT
C17
C18 C19
33µF 1µF
10µF
50V
C20
0.1µF
C21
10µF
50V
Reference circuit schematic diagram for ƒ = 960 MHz
Circuit Assembly Information
DUT
PCB
PTFA080551E or PTFA080551F
0.76 mm [.030"] thick, ε_r = 4.5
Microstrip Electrical Characteristics at 960 MHz¹
l1
0.070 λ, 50.0 Ω
l2
0.122 λ, 50.0 Ω
l3
0.031 λ, 50.0 Ω
l4
0.063 λ, 7.5 Ω
l5
0.162 λ, 67.0 Ω
l6, l7
0.150 λ, 55.0 Ω
l8
0.198 λ, 11.1 Ω
l9
0.145 λ, 38.0 Ω
l10
0.009 λ, 38.0 Ω
l11
0.026 λ, 50.0 Ω
1_{Electrical characteristics are rounded.}
LDMOS Transistor
Rogers TMM4
2 oz. copper
Dimensions: L x W (mm)
12.19 x 1.37
20.93 x 1.37
5.31 x 1.37
9.58 x 16.21
28.45 x 0.79
25.65 x 1.17
30.73 x 10.46
24.21 x 2.16
1.52 x 2.16
4.50 x 1.37
Dimensions: L x W (in.)
0.480 x 0.054
0.824 x 0.054
0.209 x 0.054
0.377 x 0.638
1.120 x 0.031
1.010 x 0.046
1.210 x 0.412
0.953 x 0.085
0.060 x 0.085
0.177 x 0.054
Data Sheet
7 of 11
Rev. 03, 2008-10-22