PTFA080551E Datasheet, PDF (5/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 – 960 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
Output Power (P–1dB) vs. Drain Voltage
I_DQ = 600 mA, ƒ = 960 MHz
51
50
49
48
47
46
45
24
26
28
30
32
Drain Voltage (V)
PTFA080551E
PTFA080551F
IS-95 CDMA Performance
V_DD = 28 V, I_DQ = 450 mA, ƒ = 960 MHz
T_CASE = 25°C
45
T_CASE = 90°C
40
35
0
-10
Efficiency
-20
30
-30
25 _{ACP FC – 0.75 MHz}
-40
20
-50
15
-60
10
-70
5
ACPR FC + 1.98 MHz ^-80
0
-90
29 31 33 35 37 39 41 43
Output Power, Avg. (dBm)
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current
0.778 A
1.03
1.55 A
1.02
3.11 A
1.01
3.88 A
1.00
4.66 A
5.44 A
0.99
6.22 A
0.98
7.00 A
0.97
0.96
-20
0
20 40 60 80 100
Case Temperature (°C)
Data Sheet
5 of 11
Rev. 03, 2008-10-22