PTFA080551E Datasheet, PDF (3/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 – 960 MHz

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Typical Performance (data taken in a production test fixture)
PTFA080551E
PTFA080551F
Edge EVM and Modulation Spectrum
vs. Quiescent Current
V_DD = 28 V, ƒ = 959.8 MHz, P_OUT = 22 W
2.1
-20
1.9
EVM
-30
1.7
-40
1.5
-50
400 kHz
1.3
-60
1.1
-70
0.9
0.7
0.35
600 kHz ^-80
0.40 0.45 0.50 0.55
Quiescent Current (A)
-90
0.60
EDGE Modulation Spectrum Performance
V_DD = 28 V, I_DQ = 450 mA, ƒ = 959.8 MHz
0
55
Efficiency
-20
45
-40
35
400 kHz
-60
25
-80
15
600 kHz
-100
5
32 34 36 38 40 42 44 46
Output Power (dBm)
EDGE EVM Performance
V_DD = 28 V, I_DQ = 450 mA, ƒ = 959.8 MHz
10
55
8
45
6
Efficiency
35
4
25
2
EVM
15
0
5
32 34 36 38 40 42 44 46
Output Power (dBm)
Intermodulation Distortion vs. Output Power
(as measured in a broadband circuit)
V_DD = 28 V, I_DQ = 450 mA, ƒ₁ = 959 MHz, ƒ₂ = 960 MHz
-20
-30
-40 _{3rd Order}
-50
5th
-60
7th
-70
30 33 36 39 42 45 48
Output Power, Avg. (dBm)
Data Sheet
3 of 11
Rev. 03, 2008-10-22