PTFA080551E Datasheet, PDF (4/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 – 960 MHz

Confidential, Limited Internal Distribution
Typical Performance (cont.)
IM3 vs. Output Power at Selected Biases
V_DD = 28 V, ƒ₁ = 959, ƒ₂ = 960 MHz
-20
600 mA
-30
300 mA
450 mA
-40
-50
-60
29 31 33 35 37 39 41 43 45 47
Output Power, Avg. (dBm)
PTFA080551E
PTFA080551F
Linear Broadband Performance
V_DD = 28 V, I_DQ = 600 mA, P_OUT Avg = 44.39 dBm
51
40
50
30
Gain
49
20
48 _Efficiency
10
47
0
46
-10
45
44
860
-20
Return Loss
-30
880
900
920
940
960
Frequency (MHz)
Power Sweep
V_DD = 28 V, ƒ = 960 MHz
19
I_DQ = 600 mA
18
17
I_DQ = 450 mA
16
I_DQ = 300 mA
15
36 38 40 42 44 46 48 50
Output Power (dBm)
Gain & Efficiency vs. Output Power
V_DD = 28 V, I_DQ = 600 mA, ƒ = 960 MHz
21
70
20
60
19 _Gain
50
18
40
17
30
16
15
Efficiency
20
14
10
36 38 40 42 44 46 48 50
Output Power (dBm)
Data Sheet
4 of 11
Rev. 03, 2008-10-22