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PTFA080551E Datasheet, PDF (2/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 – 960 MHz | |||
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Confidential, Limited Internal Distribution
RF Characteristics (cont.)
Two-tone Measurements (tested in Infineon test fixture)
VDD = 28 V, IDQ = 600 mA, POUT = 55 W PEP, Æ = 960 MHz, tone spacing = 1 MHz
Characteristic
Symbol Min
Gain
Gps
18
Drain Efficiency
ηD
46.5
Intermodulation Distortion
IMD
â
PTFA080551E
PTFA080551F
Typ
Max
Unit
18.5
â
dB
48
â
%
â31
â29
dBc
DC Characteristics
Characteristic
Drain-Source Breakdown Voltage
Drain Leakage Current
On-State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
VGS = 0 V, IDS = 10 µA
VDS = 28 V, VGS = 0 V
VDS = 63 V, VGS = 0 V
VGS = 10 V, VDS = 0.1 V
VDS = 28 V, IDQ = 450 mA
VGS = 10 V, VDS = 0 V
Symbol
V(BR)DSS
IDSS
IDSS
RDS(on)
VGS
IGSS
Min
65
â
â
â
2.0
â
Typ
â
â
â
0.15
2.3
â
Max
â
1.0
10.0
â
3.0
1.0
Unit
V
µA
µA
V
V
µA
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (TCASE = 70°C)
Ordering Information
Symbol
VDSS
VGS
TJ
PD
TSTG
RθJC
Value
65
â0.5 to +12
200
219
1.25
â40 to +150
0.8
Unit
V
V
°C
W
W/°C
°C
°C/W
Type and Version
PTFA080551E V4
PTFA080551F V4
Package Outline
H-36265-2
H-37265-2
Package Description
Thermally-enhanced,
slotted flange, single-ended
Thermally-enhanced,
earless flange, single-ended
Shipping
Tray
Tray
Marking
PTFA080551E
PTFA080551F
*See Infineon distributor for future availability.
Data Sheet
2 of 11
Rev. 03, 2008-10-22
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