PTFA080551E Datasheet, PDF (1/11 Pages) Infineon Technologies AG – Thermally-Enhanced High Power RF LDMOS FETs 55 W, 869 – 960 MHz

Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
55 W, 869 – 960 MHz
Description
The PTFA080551E and PTFA080551F are 55-watt LDMOS FETs
designed for EDGE and CDMA power amplifier applications in the
869 to 960 MHz band. Features include input matching and thermally-
enhanced packages with slotted or earless flanges. Manufactured
with Infineon's advanced LDMOS process, these devices provide
excellent thermal performance and superior reliability.
PTFA080551E
Package H-36265-2
PTFA080551F
Package H-37265-2
PTFA080551E
PTFA080551F
Three-carrier CDMA2000 Performance
V_DD = 28 V, I_DQ = 450 m A, ƒ = 960 MHz
40
-35
35
Efficiency
-40
30
25
ACP Low
20
ACP Up
15
10
5
-45
-50
-55
-60
ALT Up
-65
0
-70
29 31 33 35 37 39 41 43
Output Power, Avg. (dBm)
Features
• Broadband internal matching
• Typical EDGE performance
- Average output power = 26 W
- Gain = 18 dB
- Efficiency = 44%
• Typical CW performance
- Output power at P–1dB = 75 W
- Gain = 17 dB
- Efficiency = 67%
• Integrated ESD protection: Human Body Model,
Class 2 (minimum)
• Excellent thermal stability, low HCI drift
• Capable of handling 10:1 VSWR @ 28 V, 55 W
(CW) output power
• Pb-free and RoHS compliant
RF Characteristics
EDGE Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 450 mA, P_OUT = 26 W AVG, ƒ = 959.8 MHz
Characteristic
Symbol Min Typ
Max
Unit
Error Vector Magnitude
EVM (RMS) —
2.5
—
%
Modulation Spectrum @ 400 kHz
ACPR
—
–60
—
dBc
Modulation Spectrum @ 600 kHz
ACPR
—
–75
—
dBc
Gain
Drain Efficiency
G_ps
—
18
—
dB
η_D
—
44
—
%
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 11
Rev. 03, 2008-10-22