PTF211802 Datasheet, PDF (7/8 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz

PTF211802
Package Outline Specifications
Type
PTF211802A
PTF211802E
Package Outline
20275
30275
Package Description
Standard ceramic, flange
Thermally enhanced, flange
Marking
PTF211802A
PTF211802E
2X 45°±5° X 1.19
[.047]
16.61±0.51
[.654±.020]
9 .4 0 ^+-00..1105
[.370 ^+-..000]046
4X 3.23±0.25
[.127±.010]
Package 30275
Package 20275
D
D
G
G
35.56
[1.400]
4X 11.68
[.460]
2X R 1.59
[.063]
S
LID
9
.14
+0 .1 0
-0.15
2X 3.18
[.125]
[.360+-..00004]6
10.16
[.400]
4.55±0.38
[.179±.015]
0.51
[.020]
31.24±0.28
[1.230±.011]
1 .6 3
[.064]
41.15
[1.620]
2.18
[.086] SPH
ERA- H- 3 0 2 7 5 - 4 - 1 - 2 3 0 4
Notes: Unless otherwise specified
1. Interpret dimensions and tolerances per ASME Y14.5M-1994.
2. Primary dimensions are mm. Alternate dimensions are inches.
3. Pins: D = drain, S = source, G = gate
4. Lead thickness: 0.13 +0.051/–0.025 [.005 +.002/–.001 ]
0.038 [.0015] -A-
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
Data Sheet
7
2004-02-13