PTF211802 Datasheet, PDF (5/8 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz

PTF211802
Reference Circuit
VDD
C1
.01µF
R3
QQ1
2KV
C2
.01µF
LM7805
C3
R2
1.3KV
R1
1.2KV
. 01µ F
Q1
BCP56
RF_IN
R4 R6
10V 1KV
R5
R7
24KV 3KV
l13
C4
C5
0.1 µF 8.2pF
R10
10 V
DUT
l7 l9 l11
C6
l5 ₂ ^20pF
l1 l2 l3 l4 l6
l 8 l10 l12
C7
0.1pF
C8
1.2pF
C9
20pF
R11
10 V
l14
C10 C11
0.1µF 8.2pF
VDD
C12 C13 C14
l17 ^{10pF 1µF}
100µ F
50V
l15 l19
l 21 l23 l26 l27
C16
C15 ^12pF
0.6pF
l25 ₂
RF_OUT
l16 l20
l18
l22 l24
C17
12pF
C18 C19
10pF 1µF
C20 ^VDD
100 µF
50V
211802_sch-e
Reference Circuit Schematic for 2140 MHz
Circuit Assembly Information
DUT
Circuit board
PTF211802E
ε 0.76 mm [.030”] thick, _r = 3.48
LDMOS transistor
Rogers 4350, 2 oz. copper
Microstrip
l1
l2
l3
l4
l5
l6
l7, l8
l9, l10
l11, l12
l13, l14
l15, l16
l17, l18
l19, l20
l21, l22
l23, l24
l25
l26
l27
Electrical Characteristics at 2140 MHz
0.110 λ, 50.0 Ω
0.175 λ, 50.0 Ω
0.205 λ, 35.4 Ω
0.092 λ, 35.4 Ω
0.500 λ, 50.0 Ω
0.052 λ, 50.0 Ω
0.110 λ, 31.8 Ω
0.073 λ, 22.4 Ω
0.089 λ, 9.10 Ω
0.337 λ, 50.4 Ω
0.132 λ, 8.42 Ω
0.250 λ, 50.0 Ω
0.035 λ, 13.2 Ω
0.057 λ, 36.5 Ω
0.061 λ, 50.0 Ω
0.500 λ, 50.0 Ω
0.264 λ, 35.4 Ω
0.136 λ, 50.0 Ω
Dimensions: L x W (mm.)
9.40 x 1.70
14.78 x 1.70
16.99 x 2.84
7.57 x 2.84
42.67 x 1.70
4.39 x 1.70
9.04 x 3.30
5.84 x 5.26
6.86 x 15.09
28.58 x 1.70
10.01 x 16.33
21.26 x 1.70
2.74 x 9.96
4.70 x 2.72
5.21 x 1.70
42.67 x 1.70
21.79 x 2.84
11.51 x 1.70
Dimensions: L x W (in.)
0.370 x 0.067
0.582 x 0.067
0.669 x 0.112
0.298 x 0.112
1.680 x 0.067
0.173 x 0.067
0.356 x 0.130
0.230 x 0.207
0.270 x 0.594
1.125 x 0.067
0.394 x 0.643
0.837 x 0.067
0.108 x 0.392
0.185 x 0.107
0.205 x 0.067
1.680 x 0.067
0.858 x 0.112
0.453 x 0.067
Data Sheet
5
2004-02-13