PTF211802 Datasheet, PDF (3/8 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz

PTF211802
Typical Performance (cont.)
Intermodulation Distortion vs. Output Power
for selected currents
V_DD = 28 V, f = 2140 MHz, tone spacing = 5 MHz
-20
-25
-30
1.6 A
-35
2.4 A
2.0 A
-40
-45
-50
-55
-60
1.8 A
-65
2.2 A
39 41 43 45 47 49 51 53 55
Output Power (dBm), PEP
Intermodulation Distortion Products
vs. Tone Spacing
V_DD = 28 V, I_DQ = 2.0 A, P_OUT (PEP) = 170 W, f = 2140 MHz
-20
-25
3rd Order
-30
5th
-35
-40
-45
7th
-50
-55
-60
0
5
10 15 20 25 30
Tone Spacing (MHz)
Two–Tone Drive–Up
V_DD = 28 V, I_DQ = 2.0 A, f = 2140 MHz,
tone spacing = 5 MHz
45
40
35
30
25
20
15
10
5
42
-20
Ef f iciency
-25
IM3 ^-30
-35
-40
IM5
-45
IM7 ^-50
-55
44 46 48 50 52
Output Power (dBm), PEP
-60
54
Single–Carrier WCDMA Drive–Up
V_DD = 28 V, I_DQ = 2.0 A, f = 2140 MHz,
3GPP WCDMA signal, Test Model 1 w /16 DPCH,
67% clipping, P/A R = 8.7 dB, 3.84 MHz BW
30
-30
Drain Efficiency
25
-35
20
Gain
15
10
-40
-45
ACPR
-50
5
-55
0
-60
37 38 39 40 41 42 43 44 45 46 47
Output Power (dBm), Avg.
Data Sheet
3
2004-02-13