PTF211802 Datasheet, PDF (4/8 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz

PTF211802
Typical Performance (cont.)
IM3, Drain Efficiency and Gain
vs. Supply Voltage
I_DQ = 2.0 A, P_OUT (PEP) = 170 W, f = 2140 MHz,
tone spacing = 5 MHz
45
-5
40
-10
35
Drain Efficiency
-15
30
IM3
-20
25
-25
20
-30
15
-35
10
Gain
-40
5
-45
0
-50
22 24 26 28 30 32 34
Drain Voltage (V)
Bias Voltage vs. Case Temperature
Voltage normalized to typical gate voltage.
Series show current.
1.03
1.02
3.00 A
1.01
6.00 A
1.00
9.00 A
12.00 A
0.99
15.00 A
0.98
18.00 A
0.97
0.96
-20
30
80
130
Case Temperature (°C)
Broadband Circuit Impedance Data
V_DD = 28 V, I_DQ = 1900 mA, P_OUT = 30 W AVG Two–Carrier WCDMA
Z Source
G
G
D ^{Z Load}
S
D
Z Load
2200 MHz
2070 MHz
Z₀ = 50 Ω
Frequency
MHz
2070
2110
2140
2170
2200
Z Source Ω
R
jX
10.22
-14.00
9.56
-13.48
9.14
-13.00
8.70
-12.60
8.24
-12.22
Data Sheet
Z Load Ω
R
jX
4.28
1.24
4.06
1.94
3.98
2.42
3.84
2.90
3.76
3.34
4
Z Source
2200 MHz
2070 MHz
2004-02-13