PTF211802 Datasheet, PDF (1/8 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz

PTF211802
LDMOS RF Power Field Effect Transistor
180 W, 2110–2170 MHz
Description
Features
The PTF211802 is a 180 W, internally matched, laterally double–diffused,
GOLDMOS push–pull FET intended for WCDMA applications from 2110 to
2170 MHz. Full gold metallization ensures excellent device lifetime and
reliability.
Two–Carrier WCDMA Drive–Up
V_DD = 28 V, I_DQ = 2.0 A,
f₁ = 2140 MHz, f₂ = 2150 MHz, 3GPP
WCDMA signal, P/A R = 8 dB, 3.84 MHz BW
35
-30
30
-35
25
Gain ^{Drain Efficiency}
-40
IM3
20
-45
• Broadband internal matching
• Typical two–carrier WCDMA performance
- Average output power = 38 W
- Gain = 15 dB
- Efficiency = 25%
- IM3 = –37 dBc
- ACPR < –42 dBc
• Typical CW performance
- Output power at P–1dB = 180 W
- Efficiency = 50%
• Integrated ESD protection: Human Body
Model, Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
180 W (CW) output power
15
10
5
35
-50
ACPR
37 39 41 43 45
Output Power (dBm), Average
-55
-60
47
PTF211802A
Package 20275
PTF211802E
Package 30275
ESD: Electrostatic discharge sensitive device — observe handling precautions!
RF Characteristics at T_CASE = 25°C unless otherwise indicated
WCDMA Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 2.0 A, P_OUT = 38 W AVG
f₁ = 2140 MHz, f₂ = 2150 MHz, two–carrier 3GPP, channel bandwidth = 3.84 MHz , peak/average = 8 dB @ 0.01% CCDF
Characteristic
Intermodulation Distortion
Gain
Drain Efficiency
Symbol Min Typ
IM3
—
–37
G_ps
—
15
η_D
—
25
Two–Tone Measurements (tested in Infineon test fixture)
V_DD = 28 V, I_DQ = 2.0 A, P_OUT = 60 W PEP, f = 2110 MHz, tone spacing = 5 MHz
Characteristic
Symbol Min Typ
Gain
Drain Efficiency
Intermodulation Distortion
G_ps
12.5
15
η_D
20
22
IMD
—
–40
Max
—
—
—
Units
dBc
dB
%
Max
—
—
–38
Units
dB
%
dBc
Data Sheet
1
2004-02-13