PTF211802 Datasheet, PDF (2/8 Pages) Infineon Technologies AG – LDMOS RF Power Field Effect Transistor 180 W, 2110-2170 MHz

PTF211802
DC Characteristics at T_CASE = 25°C unless otherwise indicated
Characteristic
Drain–Source Breakdown Voltage
Drain Leakage Current
On–State Resistance
Operating Gate Voltage
Gate Leakage Current
Conditions
V_GS = 0 V, I_DS = 10 µA/side
V_DS = 28 V, V_GS = 0 V
V_GS = 10 V, V_DS = 0.1 V
V_DS = 28 V, I_DQ = 1.0 A/side
V_GS = 10 V, V_DS = 0 V
Symbol
V_(BR)DSS
I_DSS
R_DS(on)
V_GS
I_GSS
Maximum Ratings
Parameter
Drain–Source Voltage
Gate–Source Voltage
Junction Temperature
Total Device Dissipation
Above 25°C derate by
Total Device Dissipation
Above 25°C derate by
Storage Temperature Range
Thermal Resistance
(T_CASE = 70°C, 130 W CW)
PTF211802A
PTF211802E
PTF211802A
PTF211802E
Symbol
V_DSS
V_GS
T_J
P_D
P_D
T_STG
R_θJC
R_θJC
Typical Performance (data taken in a production test fixture)
Min Typ
65
—
—
—
—
0.1
2.5
3.2
—
—
Max
—
1.0
—
4
1.0
Value
65
–0.5 to +12
200
498
2.85
647
3.70
–40 to +150
0.35
0.27
Units
V
µA
Ω
V
µA
Unit
V
V
°C
W
W/°C
W
W/°C
°C
°C/W
°C/W
Broadband Performance
V_DD = 28 V, I_DQ = 2.0 A, P_OUT = 38 W
40
0
35
Return Loss ^-5
30
-10
Ef f iciency
25
-15
20
-20
15
-25
Gain
10
-30
5
2080
2100
2120 2140 2160
Frequency (MHz)
2180
-35
2200
Data Sheet
2
Power Sweep, under Pulsed Conditions
V_DD = 28 V, I_DQ = 2.0 A, f = 2140 MHz,
pulse period = 1 ms, 0.8% duty cycle
58
Ideal
56
P-1dB = 52.8 dBm
54
52
Actual
50
48
P-3dB = 53.6 dBm
46
30 32 34 36 38 40 42 44
Input Power (dBm)
2004-02-13