PTF210101M Datasheet, PDF (7/8 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz

PTF210101M
Package Outline Specifications
Package PG-RFP-10 (TSSOP-10 Outline)
0.5
0.22 ±0.05
A
0.1 A
0.08 ^M A B C
10
6
3 ±0.1
H
C
0.42
+0.15
–0.10
4.9
0.25 ^M A B C
PG-RFP-10
1
5
3 ±0.1
B
Index marking
Diagram Notes—unless otherwise specified:
1. All tolerances ± 0.127 [.005] unless specified otherwise.
2. Dimensions are mm
3. Lead thickness: 0.09
4. Pins: 1 – 5 = gate, underside = source, 6 – 10 = drain
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Data Sheet
7 of 8
Rev. 02.1, 2009-02-18