PTF210101M Datasheet, PDF (3/8 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz

PTF210101M
Typical Performance (data taken in production test fixture)
Power Sweep, CW Conditions
V_DD = 28 V, I_DQ = 180 mA, ƒ = 2170 MHz
17
Efficiency
16
15
Gain
14
13
12
11
15
20
25
30
35
40
Output Power (dBm)
60
50
40
30
20
10
0
45
Two-Tone Drive-up
V_DD = 28 V, I_DQ = 180 mA, ƒ₁ = 2169, ƒ₂ = 2170 MHz
-20
-30
IM3
-40
IM5
-50
IM7
-60
-70
-80
26 28 30 32 34 36 38 40 42
Output Power, PEP (dBm)
Two-Tone Power Sweep
V_DD = 28 V, I_DQ = 180 m A, ƒ₁ = 2169, ƒ₂ = 2170 MHz
16
15
14
13
12
11
26
45
40
35
Gain
30
25
Efficiency
20
15
10
5
0
28 30 32 34 36 38 40 42
Output Power, PEP (dBm)
Broadband Performance
V_DD = 28 V, I_DQ = 180 mA, P_OUT = 41 dBm
60
-10
50 ^Efficiency
-11
40
-12
30
Return Loss _-13
20
-14
10 _Gain
0
2100
2120
2140
2160
Frequency (MHz)
-15
-16
2180
Data Sheet
3 of 8
Rev. 02.1, 2009-02-18