PTF210101M Datasheet, PDF (5/8 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz

PTF210101M
Reference Circuit
C1
0.001µF
R2
1.3K V
R1
1.2K V
QQ1
LM7805
Q1
VDD
BCP56
C2
0.001µF
C3
0.001µF
R3
R4
220 V 2KV
R5
10 V
C4
10 µF
35V
R6
10 V
C5 R7
0.1µF 1K V
C6
10µF
35V
RF_IN
C9
10p F
l1
l2
l3
l4
C8
1.2pF
C7
10pF _l8
R8
220 V
l7
DUT
l5
l6
C10
1.4pF
C12
10p F
VDD
C13
C14
C15
0.1µF 1µF
10µF
50V
l11
C16
10p F
l9
l10 l12
l13
C11
2. 4pF
RF_OUT
Reference circuit schematic for ƒ = 2170 MHz
Circuit Assembly Information
DUT
PCB
PTF210101M
0.76 mm [.030"] thick, ε_r = 3.48
LDMOS Transistor
Rogers 4350
1 oz. copper
Microstrip Electrical Characteristics at 2170 MHz¹
l1
0.048 λ, 50.0 Ω
l2
0.139 λ, 50.0 Ω
l3
0.034 λ, 50.0 Ω
l4
0.025 λ, 9.6 Ω
l5
0.068 λ, 9.6 Ω
l6
0.028 λ, 9.6 Ω
l7
0.176 λ, 81.0 Ω
l8
0.193 λ, 81.0 Ω
l9
0.015 λ, 12.9 Ω
l10
0.233 λ, 12.9 Ω
l11
0.197 λ, 67.0 Ω
l12
0.020 λ, 50.0 Ω
l13
0.072 λ, 50.0 Ω
1_{Electrical characteristics are rounded.}
Dimensions: L x W (mm)
3.99 x 1.63
11.63 x 1.63
2.84 x 1.63
1.93 x 14.27
5.21 x 14.27
2.16 x 14.27
15.11 x 0.69
16.66 x 0.69
1.19 x 10.16
17.93 x 10.16
16.76 x 1.02
1.68 x 1.63
6.68 x 1.63
Dimensions: L x W (in.)
0.157 x 0.064
0.458 x 0.064
0.112 x 0.064
0.076 x 0.562
0.205 x 0.562
0.085 x 0.562
0.595 x 0.027
0.656 x 0.027
0.047 x 0.400
0.706 x 0.400
0.660 x 0.040
0.066 x 0.064
0.263 x 0.064
Data Sheet
5 of 8
Rev. 02.1, 2009-02-18