PTF210101M Datasheet, PDF (1/8 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz

PTF210101M
High Power RF LDMOS Field Effect Transistor
10 W, 2110 – 2170 MHz
Description
The PTF210101M is an unmatched 10-watt GOLDMOS ^® FET intended for
class AB base station applications in the 2110 to 2170 MHz band. This
LDMOS device offers excellent gain, efficiency and linearity performance in
a small footprint.
PTF210101M
Package PG-RFP-10
Single-carrier WCDMA Drive-up
V_DD = 28 V, I_DQ = 180 mA, ƒ = 2170 MHz, 3GPP WCDMA
signal, P/A R = 8 dB, 3.84 MHz bandwidth
-25
30
Efficiency
-30
25
-35
20
-40
15
-45
ACPR ₁₀
-50
5
-55
0
24
28
32
36
Average Output Power (dBm)
Features
• Typical WCDMA performance
- Average output power = 2.0 W
- Gain = 15 dB
- Efficiency = 20%
- ACPR = –45 dB
• Typical CW performance
- Output Power at P–1dB = 10 W
- Gain = 14 dB
- Efficiency = 50%
• Integrated ESD protection:
Human Body Model Class 1 (minimum)
• Excellent thermal stability
• Low HCI drift
• Capable of handling 10:1 VSWR @ 28 V,
10 W (CW) output power
• Pb-free and RoHS compliant
RF Characteristics
Two-Tone Measurements (not subject to production test—verified by design/characterization in Infineon test fixture)
V_DD = 28 V, I_DQ = 180 mA, P_OUT = 10 W PEP, ƒ = 2170 MHz, tone spacing = 1 MHz
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
Symbol Min Typ
G_ps
15
—
η_D
35
—
IMD
—
—
Max
—
—
–28
Unit
dB
%
dBc
All published data at T_CASE = 25°C unless otherwise indicated
*See Infineon distributor for future availability.
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 8
Rev. 02.1, 2009-02-18