PTF210101M Datasheet, PDF (4/8 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz

PTF210101M
Typical Performance (cont.)
Voltage Sweep
I_DQ = 180 mA, ƒ = 2110 MHz
42
41
40
39
38
37
20 22 24 26 28 30 32 34
Supply Voltage (V)
Gate-Source Voltage vs. Temperature
Voltage normalized to typical gate voltage,
series show current.
1.04
1.03
1.02
1.01
1.00
0.99
0.98
0.97
0.96
-20
0.05 A
0.28 A
0.51 A
0.74 A
0.97 A
1.20 A
0
20
40
60
80 100
Case Temperature (ºC)
Broadband Circuit Impedance
Z Source
D
Z Load
Frequency
MHz
2080
2110
2140
2170
2200
G
S
Z Source Ω
R
jX
2.4
–6.0
2.1
–5.8
1.8
–5.2
1.6
–4.9
1.4
–4.5
Z Load Ω
R
jX
2.1
–3.3
2.1
–3.1
2.1
–2.9
2.0
–2.8
2.0
–2.6
Data Sheet
4 of 8
Rev. 02.1, 2009-02-18