PTF210101M Datasheet, PDF (6/8 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 10 W, 2110 – 2170 MHz

PTF210101M
Reference Circuit (cont.)
R5
R3
C4
R4 C3
C6 _R2
C5
R1
R6 R7
C7
C1
LM
QQ1
C2
Q1
VDD
C13
C15
C12
C14
R8
RF_IN
C8 ^C9
C11
C10
RF_OUT
C16
210101M_C_02
210101m_assy
Reference circuit assembly diagram (not to scale)*
Component
C1, C2, C3
C4, C6
C5, C13
C7, C9, C12, C16
C8
C10
C11
C14
C15
Q1
QQ1
R1
R2
R3, R8
R4
R5, R6
R7
Description
Capacitor, 0.001 µF
Tantalum capacitor, 10 µF, 35 V
Capacitor, 0.1 µF
Ceramic capacitor, 10 pF
Ceramic capacitor, 1.2 pF
Ceramic capacitor, 1.4 pF
Ceramic capacitor, 2.4 pF
Capacitor, 1.0 µF
Tantalum capacitor, 10 µF, 50 V
Transistor
Voltage regulator
Chip Resistor 1.2 k-ohms
Chip Resistor 1.3 k-ohms
Chip Resistor 220 ohms
Potentiometer 2 k-ohms
Chip Resistor 10 ohms
Chip Resistor 1 k-ohms
Suggested Manufacturer
Digi-Key
Digi-Key
Digi-Key
ATC
ATC
ATC
ATC
ATC
Garrett Electronics
Infineon Technologies
National Semiconductor
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
P/N or Comment
PCC1772CT-ND
PCS6106TR-ND
PCC104BCT-ND
100B 100
100B 1R2
100B 1R4
100B 2R4
920C105
TPSE106K050R0400
BCP56
LM7805
P1.2KGCT-ND
P1.3KGCT-ND
P221ECT-ND
3224W-202ETR-ND
P10ECT-ND
P1KECT-ND
*Gerber Files for this circuit available on request
Data Sheet
6 of 8
Rev. 02.1, 2009-02-18