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PTF080101M Datasheet, PDF (7/8 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz | |||
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PTF080101M
Package Outline Specifications
Package PG-RFP-10 (TSSOP-10 Outline)
0.5
0.22 ±0.05
A
0.1 A
0.08 M A B C
10
6
1
5
3 ±0.1
B
Index marking
3 ±0.1
H
C
0.42
+0.15
â0.10
4.9
0.25 M A B C
PG-RFP-10
Notes: Unless otherwise specified
1. Dimensions are mm
2. Lead thickness: 0.09
3. Pins: 1 â 5 = gate, underside = source, 6 â 10 = drain
Find the latest and most complete information about products and packaging at the Infineon Internet page
http://www.infineon.com/products
Data Sheet
7 of 8
Rev. 02.1, 2009-02-18
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