PTF080101M Datasheet, PDF (3/8 Pages) Infineon Technologies AG – High Power RF LDMOS Field Effect Transistor 10 W, 450 – 960 MHz

PTF080101M
Typical Performance (data taken in production test fixture)
Broadband Performance
V_DD = 28 V, I_DQ = 180 mA, P_OUT = 40 dBm
30
60
Ef f iciency
20
50
Gain
10
40
0
30
-10
Return Loss
20
-20
10
880 900 920 940 960 980 1000
Frequency (MHz)
Typical EDGE Performance
V_DD = 28 V, I_DQ = 180 mA, ƒ = 959.8 MHz
5
50
4
Ef f iciency
40
3
30
2
20
1
10
EV M
0
0
28
30
32
34
36
38
Output Power (dBm)
EDGE Modulation Spectrum Performance
V_DD = 28 V, I_DQ = 180 mA, ƒ = 959.8 MHz
-30
-40
200 kHz
-50
-60 400 kHz
-70
600 kHz
-80
26 28 30 32 34 36 38 40
Output Power (dBm)
Two-tone Drive-up
V_DD = 28 V, I_DQ = 180 mA,
ƒ = 960 MHz, 1 MHz tone spacing
-20
50
-30
Ef f iciency
40
-40
IM3
-50
-60
30
IM5
20
IM7 ₁₀
-70
20
0
25
30
35
40
Output Power, avg. (dBm)
Data Sheet
3 of 8
Rev. 02.1, 2009-02-18